Si7973DP Vishay Intertechnology, Si7973DP Datasheet - Page 3

• Manufacturer Part Number: Si7973DP
• Description: Dual P-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72428
S-32129—Rev. A, 27-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
Source-Drain Diode Forward Voltage
D
DS
10
= 12.8 A
0.2
On-Resistance vs. Drain Current
5
= 1.8 V
= 6 V
V
SD
Q
g
I
− Source-to-Drain Voltage (V)
10
D
20
− Total Gate Charge (nC)
0.4
T
J
− Drain Current (A)
Gate Charge
= 150_C
15
30
0.6
20
40
0.8
T
J
= 25_C
V
V
GS
GS
= 2.5 V
= 4.5 V
25
50
1.0
30
60
1.2
New Product
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
−25
V
I
= 4.2 A
D
GS
= 12.8 A
C
2
V
V
1
rss
= 4.5 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
4
25
Capacitance
2
C
oss
I
Vishay Siliconix
D
= 13 A
50
6
3
75
C
Si7973DP
iss
8
100
www.vishay.com
4
10
125
150
12
5
3