FSL913A0D Intersil Corporation, FSL913A0D Datasheet

FSL913A0D

Manufacturer Part Number

FSL913A0D

Description

7a, -100v, 0.300 Ohm, Rad Hard, Segr Resistant, P-channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

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7A, -100V, 0.300 Ohm, Rad Hard, SEGR

Resistant, P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

10K

100K

RAD LEVEL

Commercial

TXV

Commercial

TXV

Space

SCREENING

LEVEL

4-1

FSL913A0D1

FSL913A0D3

FSL913A0R1

FSL913A0R3

FSL913A0R4

Data Sheet

PART NUMBER/BRAND

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 7A, -100V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Symbol

Package

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 1.5nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 3E14 Neutrons/cmg

for 3E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

FSL913A0D, FSL913A0R

June 1999

DS(ON)

= 0.300

TO-205AF

File Number 4357.2

Intersil Corporation 1999

with

DSS

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