FSL913A0D Intersil Corporation, FSL913A0D Datasheet - Page 3

• Manufacturer Part Number: FSL913A0D
• Description: 7a, -100v, 0.300 Ohm, Rad Hard, Segr Resistant, P-channel Power MOSFETs
• Manufacturer: Intersil Corporation

Source to Drain Diode Specifications
Electrical Specifications up to 100K RAD
NOTES:
Single Event Effects (SEB, SEGR)
NOTES:
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
Forward Voltage
Reverse Recovery Time
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
Single Event Effects Safe Operating Area
1. Pulse test, 300 s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
-120
-100
-80
-60
-40
-20
0
0
PARAMETER
TEMP = 25
FLUENCE = 1E5 IONS/cm
TEST
5
PARAMETER
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm
o
C
2
(typical), T = 25
10
4-3
V
GS
2
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
(TYPICAL)
(V)
SYMBOL
2
2
, RANGE = 43
, RANGE = 36
15
V
t
SD
rr
o
(Note 4)
C.
SYMBOL
SEESOA
Unless Otherwise Specified
GS
20
FSL913A0D, FSL913A0R
I
I
SD
SD
= -12V, V
T
C
r
SYMBOL
= 7A
= 7A, dI
V
DS(ON)12
V
BV
= 25
DS(ON)
GS(TH)
I
I
GSS
DSS
DSS
TEST CONDITIONS
SPECIES
o
25
DS
C, Unless Otherwise Specified
ION
SD
Br
Br
Br
Ni
= 0V and V
/dt = 100A/ s
V
V
V
V
V
V
ENVIRONMENT (NOTE 5)
GS
GS
GS
GS
GS
GS
TEST CONDITIONS
= 0, I
= V
= 20V, V
= 0, V
= -12V, I
= -12V, I
GS
TYPICAL LET
(MeV/mg/cm)
DS
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
1E-3
1E-4
1E-5
1E-6
1E-7
= 0V, V
D
DS
, I
= 1mA
-10
D
26
37
37
37
D
D
= -80V
DS
= 1mA
= 7A
= 4A
DS
= 0V
GAMMA DOT CURRENT TO I
= 80% BV
MIN
-0.6
-
-30
RANGE ( )
TYPICAL
DSS
43
36
36
36
DRAIN SUPPLY (V)
-100
MIN
.
-2.0
-
-
-
-
TYP
-
-
-100
V
APPLIED
GS
(V)
0.300
20
10
15
20
MAX
-2.31
-6.0
MAX
100
BIAS
25
-1.8
160
-
AS
-300
ILM = 10A
30A
100A
300A
V
MAXIMUM
DS
(NOTE 6)
UNITS
UNITS
BIAS (V)
-100
-100
-80
-50
nA
ns
V
V
V
V
-1000
A