SMX1J ST Microelectronics, Inc., SMX1J Datasheet - Page 3

• Manufacturer Part Number: SMX1J
• Manufacturer: ST Microelectronics, Inc.

SMX1J
Figure 4.
Figure 6.
Figure 8.
10
0.01
100.0
1
0.1
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
10
0.0
9
1
I (A)
0.5
PP
I
0
FM
P (W)
PP
(A)
25
Peak pulse power dissipation
versus initial junction temperature
Clamping voltage versus peak
pulse current (exponential
waveform, typical values)
Forward voltage drop versus peak
forward current (typical values)
50
1.0
T
10/1000 µs
jinitial
75
= 25 °C
100
1.5
11
125
150
Doc ID 16180 Rev 2
V
T (°C)
FM
j
V (V)
(V)
cl
175
2.0
Figure 5.
Figure 7.
Figure 9.
400
375
350
325
300
275
250
225
200
175
150
125
100
10000
500
500
400
400
300
300
200
200
100
100
1000
0
0
100
0
25
25
C(pF)
10
Ir (nA)
I (nA)
1
P
PP
(W)
1
50
50
Peak pulse power versus
exponential pulse duration
Junction capacitance versus
reverse applied voltage
(typical values)
Leakage current versus junction
temperature (typical values)
10
75
75
2
100
100
100
3
Characteristics
1000
V
T j initial = 25 °C
125
125
OSC
4
T j = 25 °C
F = 1 MHz
= 30 mV
V
t
T (°C)
P
LINE
j
(µs)
°
RMS
10000
(V)
150
150
3/11
5