CEM4532 Chino Excel Technology, CEM4532 Datasheet - Page 4

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CEM4532

Manufacturer Part Number
CEM4532
Description
Complementary N-p Channel SO-8 Package
Manufacturer
Chino Excel Technology
Datasheet
5
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
CEM4532
Parameter
20
16
12
600
500
400
300
200
100
8
4
0
Figure 1. Output Characteristics
0
0
V
0
GS
V
V
=10,9,8,7,6V
DS
DS
Figure 3. Capacitance
0.5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
5
1.0
10
1.5
15
V
GS
=5V
2.0
20
Ciss
Coss
Symbol
Crss
V
V
2.5
GS
25
SD
=4V
A
3.0
=25 C unless otherwise noted)
30
5-10
V
V
GS
GS
b
= 0V, Is = 1.7A N-Ch
= 0V, Is =-1.7A P-Ch
Condition
Figure 4. On-Resistance Variation with
1.80
1.60
1.40
1.20
1.00
0.80
0.60
20
16
12
8
4
0
-50 -25
1
Figure 2. Transfer Characteristics
V
I
D
GS
V
Tj=125 C
=4.7A
=10V
GS
T
, Gate-to-Source Voltage (V)
J
0
2
, Junction Temperature( C)
25
Temperature
50
3
Min Typ Max Unit
75
25 C
-55 C
100 125 150
-0.8
4
0.8
C
-1.2
1.2
5
V

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