CEM4532 Chino Excel Technology, CEM4532 Datasheet - Page 5

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CEM4532

Manufacturer Part Number
CEM4532
Description
Complementary N-p Channel SO-8 Package
Manufacturer
Chino Excel Technology
Datasheet
Figure 7. Transconductance Variation
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
Figure 5. Gate Threshold Variation
20
16
12
10
8
4
8
6
4
2
0
0
-50 -25
0
0
I
Tj, Junction Temperature ( C)
DS
Figure 9. Gate Charge
V
I
Qg, Total Gate Charge (nC)
, Drain-Source Current (A)
with Drain Current
DS
D
=4.7A
=15V
with Temperature
0
5
3
25 50
10
6
75 100 125 150
V
I
D
DS
=250 A
15
=V
V
9
GS
DS
=15V
20
12
5-11
Figure 6. Breakdown Voltage Variation
Figure 8. Body Diode Forward Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.1
10
10
10
20
10
10
1
-50 -25
-2
-1
1
0
10
0.4
CEM4532
V
-1
Single Pulse
GS
I
Figure 10. Maximum Safe
V
Tj, Junction Temperature ( C)
D
T
Tj=150 C
Variation with Source Current
=0V
=250 A
SD
A
with Temperature
=25 C
, Body Diode Forward Voltage (V)
V
0.6
DS
0
, Drain-Source Voltage (V)
10
25
1
Operating Area
0.8
50
75 100 125 150
10
0
1.0
10
1.2
1
5

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