MT55L128L18F1 Micron Semiconductor Products, Inc., MT55L128L18F1 Datasheet - Page 10

• Manufacturer Part Number: MT55L128L18F1
• Description: 2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature (plastic) ........... -55°C to +150°C
Junction Temperature** ..................................... +150°C
Short Circuit Output Current .............................. 100mA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
TQFP CAPACITANCE
NOTE: 1. All voltages referenced to V
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
DESCRIPTION
Input High (Logic 1) Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
IN
.................................................. -0.5V to V
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
6. This parameter is sampled.
A
Undershoot:
Power-up:
curves are available upon request.
≤ +70°C; V
DD
DD
DD
Q should never exceed V
Q Supply Relative to V
Supply Relative to V
DD
V
V
V
, V
IH
IL
IH
≥ -0.7V for t ≤
DD
≤ +4.6V for t ≤
≤ +3.465V and V
OH
Q = +3.3V ±0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
SS
DD
SS
(GND).
. V
SS
.... -0.5V to +4.6V
T
t
Output(s) disabled,
t
KHKH/2 for I ≤ 20mA
A
DD
..... -0.5V to V
KHKH/2 for I ≤ 20mA
DD
= 25°C; f = 1 MHz
CONDITIONS
0V ≤ V
0V ≤ V
CONDITIONS
and V
I
OH
I
≤ 3.135V for t ≤ 200ms
V
OL
DD
DQ pins
DD
= -4.0mA
= 8.0mA
Q + 0.5V
DD
= 3.3V
IN
IN
Q can be externally wired together to the same power supply.
≤ V
≤ V
DD
DD
DD
3.3V I/O, FLOW-THROUGH ZBT SRAM
10
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature and air-
flow. See Micron Technical Note TN-05-14 for more
information.
SYMBOL
SYMBOL
V
C
V
2Mb: 128K x 18, 64K x 32/36
V
C
C
V
V
V
IL
V
C
DD
IL
CK
OH
DD
O
A
OL
IH
IH
I
IL
O
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
MIN
TYP
-1.0
-0.3
-1.0
2.7
2.5
2.5
2.0
2.0
2.4
4
–
V
V
DD
DD
MAX
MAX
3.465
3.5
3.5
3.5
V
0.8
1.0
1.0
0.4
5
–
+ 0.3
+ 0.3
DD
UNITS
UNITS
µA
µA
pF
pF
pF
pF
V
V
V
V
V
V
V
©2002, Micron Technology, Inc.
NOTES
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 5
6
6
6
6
3
1