MT55L128L18F1 Micron Semiconductor Products, Inc., MT55L128L18F1 Datasheet - Page 13
MT55L128L18F1
Manufacturer Part Number
MT55L128L18F1
Description
2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Flow-Through,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT55L128L18F1.pdf
(18 pages)
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NOT RECOMENDED FOR NEW DESIGNS
AC TEST CONDITIONS
LOAD DERATING CURVES
SRAM timing is dependent upon the capacitive load-
ing on the outputs.
voltage curves.
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
Input pulse levels ................................... V
Input rise and fall times .................................. 1.0ns
Input timing reference levels .......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
The Micron 128K x 18, 64K x 32, and 64K x 36 ZBT
Consult the factory for copies of I/O current versus
SS
to 3.0V
3.3V I/O, FLOW-THROUGH ZBT SRAM
13
2Mb: 128K x 18, 64K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Output Load Equivalents
Q
Q
351
Z = 50Ω
O
Figure 1
Figure 2
+3.3V
V = 1.5V
T
317
5pF
50Ω
©2002, Micron Technology, Inc.