MT55L128L32P1 Micron Semiconductor Products, Inc., MT55L128L32P1 Datasheet - Page 21

• Manufacturer Part Number: MT55L128L32P1
• Description: 4Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined,
• Manufacturer: Micron Semiconductor Products, Inc.

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all in-
puts except ZZ become disabled and all outputs go to
High-Z.
that causes the device to enter SNOOZE MODE. When
SNOOZE MODE ELECTRICAL CHARACTERISTICS
NOTE: 1. This parameter is sampled.
4Mb: 256K x 18, 128K x 32/36 Pipelined ZBT SRAM
MT55L256L18P1_F.p65 – Rev. F, Pub. 1/03 EN
DESCRIPTION
Current during SNOOZE MODE
Current during SNOOZE MODE
(P Version)
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, “power-down”
The ZZ pin is an asynchronous, active HIGH input
Outputs (Q)
ALL INPUTS
(except ZZ)
I
SUPPLY
CLK
SB
ZZ
2Z
. The duration of SNOOZE MODE is
t
ZZI
t
I
ZZ
ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ ≥ V
ZZ ≥ V
IH
IH
21
High-Z
the ZZ pin becomes a logic HIGH, I
after the time
tion pending when the device enters SNOOZE MODE
is not guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed. Similarly, when exiting
SNOOZE MODE during
READ cycle should be given.
4Mb: 256K x 18, 128K x 32/36
SYMBOL
t
I
t
I
t
RZZI
SB
t
RZZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SB
ZZI
ZZ
2
2Z
ZP
t
ZZI is met. Any READ or WRITE opera-
PIPELINED ZBT SRAM
MIN
0
0
0
DESELECT or READ Only
t
RZZI
2(
2(
2(
t
RZZ, only a DESELECT or
t
t
t
MAX
KHKH)
KHKH)
KHKH)
10
1
t
RZZ
SB
UNITS
2Z
mA
mA
ns
ns
ns
ns
DON’T CARE
©2003, Micron Technology, Inc.
is guaranteed
NOTES
1
1
1
1