STB20NM50 ST Microelectronics, Inc., STB20NM50 Datasheet - Page 3

• Manufacturer Part Number: STB20NM50
• Description: N-channel 500V - 0.20 Ohm - 20A TO-220/TO-220FP/D2PAK/I2PAK Mdmesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area For TO-220 / I²PAK / D²PAK
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
r(Voff)
d(on)
Q
Q
RRM
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
Q
SD
t
t
t
t
t
rr
rr
gs
gd
c
r
f
rr
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
SD
DD
DD
GS
DD
DD
G
DD
G
= 4.7
= 4.7
= 20 A, V
= 20 A, di/dt = 100A/µs,
= 20 A, di/dt = 100A/µs,
= 250 V, I
= 400 V, I
= 10 V
= 100 V, T
= 100 V, T
= 400 V, I
Test Conditions
Test Conditions
Test Conditions
V
V
STP20NM50/FP/STB20NM50/STB20NM50-1
GS
GS
GS
D
D
D
j
j
= 10 V
= 25°C
= 150°C
= 10 A
= 20 A,
= 20 A,
= 0
= 10 V
Safe Operating Area For TO-220FP
Min.
Min.
Min.
Typ.
Typ.
Typ.
350
435
8.5
4.6
5.9
24
16
40
13
19
23
26
27
9
Max.
Max.
Max.
1.5
56
20
80
Unit
Unit
Unit
nC
nC
nC
µC
µC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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