STB30NS15 ST Microelectronics, Inc., STB30NS15 Datasheet - Page 3

• Manufacturer Part Number: STB30NS15
• Description: N-channel 150V - 0.075 Ohm - 30A D2PAK Low Gate Charge StripFET Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by T
Symbol
Symbol
Symbol
I
SDM
V
t
t
t
I
r(Voff)
d(on)
Q
d(off)
RRM
Q
SD
I
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
g
rr
(*)
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)
(*)
jmax
Parameter
Parameter
Parameter
(*)
V
R
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
V
R
(Inductive Load, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
DD
clamp
DD
G
G
G
= 4.7
= 4.7
= 4.7
= 30 A
= 30 A
=120V I
= 75 V
= 75 V
= 50 V
Test Conditions
Test Conditions
Test Conditions
= 120 V
D
=30A V
Thermal Impedance
V
di/dt = 100A/µs
T
GS
V
j
V
GS
= 150°C
V
I
GS
D
= 0
GS
I
GS
I
D
D
= 10 V
=15 A
= 30 A
= 10 V
=10V
= 10 V
= 15 A
Min.
Min.
Min.
Typ.
Typ.
Typ.
1.25
190
12
28
64
27
50
12
50
17
11
13
8
Max.
Max.
Max.
120
STB30NS15
1.3
30
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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