STB40NF10 ST Microelectronics, Inc., STB40NF10 Datasheet - Page 3

• Manufacturer Part Number: STB40NF10
• Description: N-channel 100V - 0.024 Ohm - 50A TO-220/D2PAK/DPAK Low Gate Charge StripFET ii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
I
C
SD
C
C
d(on)
Q
Q
fs
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
oss
t
t
iss
rss
rr
gs
gd
r
(1)
f
g
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Parameter
Parameter
Parameter
Parameter
V
V
R
(see test circuit, Figure 3)
V
V
R
(see test circuit, Figure 3)
I
I
V
(see test circuit, Figure 5)
V
SD
SD
DS
DD
DD
DD
DD
DS
G
G
= 4.7
= 4.7
= 50 A, V
= 50 A, di/dt = 100A/µs,
= 80V, I
= 25V
= 50 V, I
= 50 V, I
= 25V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
,
V
I
D
V
D
GS
D
= 50A, V
D
GS
j
GS
= 25 A
= 150°C
= 25 A
= 25 A,
= 10V
= 10V
= 0
STP40NF10 - STD40NF10 - STB40NF10
GS
GS
= 10V
= 0
Min.
Min.
Min.
Min.
1780
Typ.
Typ.
Typ.
60.6
22.8
Typ.
265
112
114
456
9.6
20
28
63
84
28
8
Max.
Max.
Max.
Max.
200
1.3
80
50
Unit
Unit
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
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