STB50NE10 ST Microelectronics, Inc., STB50NE10 Datasheet - Page 3

• Manufacturer Part Number: STB50NE10
• Description: N-channel 100V - 0.021 Ohm - 50A - D2PAK StripFET Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
SDM
V
t
t
I
r(Voff)
d(on)
Q
RRM
Q
SD
I
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
g
rr
(*)
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-Voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
R
(Resistive Load, Figure 3)
V
V
R
(Inductive Load, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
clamp
DD
G
G
= 4.7
= 4.7
= 50 A
= 50 A
= 80 V I
= 50 V
= 30 V
Test Conditions
Test Conditions
Test Conditions
= 80 V
D
= 50 A V
Thermal Impedance
di/dt = 100A/µs
V
V
GS
T
V
GS
j
I
GS
= 150°C
D
I
= 0
D
GS
= 10 V
= 25 A
= 50 A
= 10 V
= 10V
Min.
Min.
Min.
Typ.
Typ.
Typ.
10.5
100
123
155
815
25
24
47
45
35
65
Max.
Max.
Max.
1100
135
200
210
166
STB50NE10
1.5
34
61
48
88
50
15
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
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