BC635-AP ST Microelectronics, Inc., BC635-AP Datasheet - Page 2

• Manufacturer Part Number: BC635-AP
• Description: Small Signal NPN Transistor
• Manufacturer: ST Microelectronics, Inc.

BC635
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
R
V
R
Pulsed: Pulse duration = 300 s, duty cycle
V
Symbol
V
(BR)CEO
thj-amb
thj-Case
CE(sat)
BE(on)
I
I
h
CBO
EBO
f
FE
T
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
C
B
= 0)
= 0)
Parameter
E
= 0)
2 %
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CB
EB
= 10 mA
= 500 mA
= 500 mA
= 5 mA
= 150 mA
= 500 mA
= 10 mA V
= 5 V
= 30 V
case
= 25
Test Conditions
CE
o
C unless otherwise specified)
= 5 V f = 50MHz
V
V
V
V
I
B
CE
CE
CE
CE
= 50 mA
= 2 V
= 2 V
= 2 V
= 2 V
Max
Max
Min.
45
25
40
25
Typ.
83.3
100
125
Max.
250
0.1
0.1
0.5
1
o
o
Unit
MHz
C/W
C/W
V
V
V
A
A