MJD127-1 ST Microelectronics, Inc., MJD127-1 Datasheet - Page 2

• Manufacturer Part Number: MJD127-1
• Description: Complementary Power Darlington Transistors
• Manufacturer: ST Microelectronics, Inc.

MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
* Pulsed: Pulse duration = 300 µs, duty cycle
For PNP types voltage and current values are negative.
2/8
V
V
V
Symbol
V
R
R
CEO(sus)
CE(sat)
BE(sat)
BE(on)
thj-case
thj-amb
I
I
I
h
I
CBO
CEO
CEX
EBO
FE
*
*
*
*
* Collector-Emitter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Collector Cut-off
Current (V
Emitter Cut-off Current
(I
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
C
B
= 0)
= 0)
Parameter
E
B
BE
= 0)
= 0)
= -1.5 V)
V
V
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
2 %.
CB
CE
CE
CE
EB
= 30 mA
= 4 A
= 8 A
= 8 A
= 4 A
= 4 A
= 8 A
= 5 V
= 100 V
= 50 V
= 100 V
= 100 V
j
= 25 °C unless otherwise specified)
Test Conditions
T
I
I
I
V
V
V
B
B
B
j
CE
CE
CE
= 125 °C
= 16 mA
= 80 mA
= 80 mA
= 4 V
= 4 V
= 4 V
Max
Max
1000
Min.
100
100
6.25
Typ.
100
12000
Max.
500
4.5
2.8
10
10
10
2
2
4
°C/W
°C/W
Unit
mA
µA
µA
µA
µA
V
V
V
V
V