MJD31-1 Motorola Semiconductor Products, MJD31-1 Datasheet - Page 4

• Manufacturer Part Number: MJD31-1
• Description: Silicon Power Transistors 3 Amperes 40 And 100 Volts 15 Watts
• Manufacturer: Motorola Semiconductor Products

MJD31,C MJD32,C
4
0.05
0.03
0.02
0.01
0.5
0.3
0.2
0.1
10
5
3
2
1
0.07
0.05
0.03
0.02
0.01
1.6
1.2
0.8
0.4
0.7
0.5
0.3
0.2
0.1
1.5
2
0
1
Figure 10. Active Region Safe Operating Area
0.01
1
CURVES APPLY BELOW RATED V CEO
T C = 25 C SINGLE PULSE
T J = 150 C
2
SINGLE PULSE
D = 0.5
I C = 0.3 A
2
3
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.02 0.03
Figure 7. Collector Saturation Region
0.01
0.05
0.1
0.2
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
5
MJD31C, MJD32C
7
0.05
I B , BASE CURRENT (mA)
10
MJD31, MJD32
10
1 A
dc
20
0.1
1 ms
20
50
0.2 0.3
30
500 s
100 200
50
3 A
100 s
0.5
T J = 25 C
70
Figure 9. Thermal Response
100
500
1
150
1000
2
t, TIME (ms)
R JC(t) = r(t) R JC
R JC = 8.33 C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) JC(t)
3
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of a
The data of Figure 10 is based on T J(pk) = 150 _ C; T C is
300
200
100
150 _ C. T J(pk) may be calculated from the data in Fig-
70
50
30
5
0.1
Motorola Bipolar Power Transistor Device Data
10
0.2 0.3
20
V R , REVERSE VOLTAGE (VOLTS)
0.5
Figure 8. Capacitance
30
P (pk)
1
50
DUTY CYCLE, D = t 1 /t 2
t 1
2
100
t 2
3
C eb
200 300
5
T J = + 25 C
10
500
20 30
C cb
1 k
40