T15N1M16A TM tech, T15N1M16A Datasheet - Page 9
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T15N1M16A
Manufacturer Part Number
T15N1M16A
Description
64K X 16 LOW POWER CMOS STATIC RAM
Manufacturer
TM tech
Datasheet
1.T15N1M16A.pdf
(13 pages)
tm
WRITE CYCLE 3
NOTES ( WRITE CYCLE ) :
TM Technology Inc. reserves the right
to change products or specifications without notice.
U B / L B
A d d r e s s
D O U T
1. A write occurs during the overlap of a low CE , a low WE . A write begins at the lateat
2.
3.
4.
C E
W E
D I N
transition among CE goes low, WE going low. A write end at the earliest transition among
write.
t
t
t
CE going high, WE going high.
CW
AS
WR
CH
TE
is measured from the address valid to the beginning of write.
is measured from the later of CE going low to the end of write.
is measured from the end of write to the address change.
H i g h - Z
H i g h - Z
( UB , LB Controlled)
t AS
t
t AW
WP
is measured from the beginning of write to the end of
t CW
t BW
t WC
P. 9
t WP
t DW
t DH
t WR
Publication Date: JUL. 2002
T15N1M16A
H i g h - Z
DO N' T CARE
UNDE FINE D
Revision: A