T15V4M08A TM tech, T15V4M08A Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
T15V4M08A
Manufacturer Part Number
T15V4M08A
Description
512K X 8 LOW POWER CMOS STATIC RAM
Manufacturer
TM tech
Datasheet
1.T15V4M08A.pdf
(11 pages)
tm
OPERATING CHARACTERISTICS
(Vcc = 2.7 to 3. 6V, Vss = 0V, Ta = -40 C to 85 C)
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
Average Operating
Output High Voltage
Output Low Voltage
PARAMETER SYM.
Operating Power
Output Leakage
Standby Power
Standby Power
Supply Current
Supply Current
Supply Current
(CMOS Level)
Input Leakage
(TTL Level)
Current
Current
Current
CH
TE
V
V
I
I
I
I
I
I
I
CC1
CC2
OL
LO
CC
S B 1
OH
S B
LI
Vcc = Max,
V
or OE = V
or
V
V
I
Cycle time=1us,
100% duty, I
or V
Cycle time=min,
100% duty, I
V
V
V
V
I
I
CE
CE
WE
CE
CE
CE
OUT
CE
OL
OH
IN
OUT
IN
IN
IN
IN
IN
TEST CONDITIONS
= 2.1mA
WE
= -1.0 mA
= V
= V
= V
= V
= V
IN
= Vss to Vcc
=V
= V
=0mA
=
0.2V or
Vcc-0.2V
0.2V,V
Vcc-0.2V,
= Vss to Vcc
V
IH
IL
IH,
Vcc-0.2V
IL
IH
IH
IH
= V
IH
,
,
OE
or V
or V
or V
IH
IL
OUT
OUT
IN
= V
IL
IL
IL,
0.2V
=0mA,
=0mA,
IH
,
Min
2.2
-
-
-
-
-
-
-
-
P. 4
-55
Max
0.3
0.4
40
10
3
1
1
2
-
Preliminary T15V4M08A
Min
2.2
-
-
-
-
-
-
-
-
-70
Publication Date: MAR. 2001
Max
0.3
0.4
35
10
3
1
1
2
-
Min
2.2
-
-
-
-
-
-
-
-
-100
Max
0.3
0.4
10
25
1
3
1
2
-
Revision:0.A
UNIT
mA
mA
mA
mA
uA
uA
uA
V
V