T15V4M08A TM tech, T15V4M08A Datasheet - Page 6
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T15V4M08A
Manufacturer Part Number
T15V4M08A
Description
512K X 8 LOW POWER CMOS STATIC RAM
Manufacturer
TM tech
Datasheet
1.T15V4M08A.pdf
(11 pages)
tm
AC CHARACTERISTICS
(1) READ CYCLE
(2)WRITE CYCLE
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low -Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Write Cycle Time
Chip Enable to Write End
Address Valid to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
PARAMETER
PARAMETER
CH
TE
(
V cc
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
SYM.
RC
AA
ACE
OE
OH
LZ
HZ
OLZ
OHZ
SYM.
WC
CW
AW
AS
WP
WR
DW
DH
WHZ
OW
=2.7 to 3.6V, Vss = 0V, Ta = -40 C to 85 C)
Min
Min
55
10
10
55
50
50
45
25
-
-
-
-
5
-
0
0
0
5
-
-55
-55
Max
Max
55
55
30
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
P. 6
Min
Min
70
10
10
70
60
60
50
30
5
0
0
0
5
-
-
-
-
-
-
-70
-70
Preliminary T15V4M08A
Max
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
Publication Date: MAR. 2001
Min
Min
100
100
10
10
80
80
70
40
0
0
0
5
5
-
-
-
-
-
-
-100
-100
Max
Max
100
100
50
30
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
UNIT
Revision:0.A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns