P1007M4 Cystech Electonics Corp., P1007M4 Datasheet - Page 2

• Manufacturer Part Number: P1007M4
• Description: Low Vcesat Pnp Epitaxial Planar Transistor
• Manufacturer: Cystech Electonics Corp.

Absolute Maximum Ratings
Characteristics
Parameter
BTB1205I3
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation (T
Power Dissipation (T
Junction Temperature
Storage Temperature
Note : 1
*V
*V
Symbol
BV
BV
BV
*h
*h
I
I
Cob
CBO
EBO
CE(sat)
BE(sat)
f
T
CBO
CEO
EBO
FE
FE
.
Single Pulse Pw=10ms
Min.
190
-25
-20
60
-5
-
-
-
-
-
-
(Ta=25 C)
A
C
=25℃)
=25℃)
CYStech Electronics Corp.
Typ.
-380
-1.0
320
60
-
-
-
-
-
-
-
(Ta=25 C)
Max.
-500
-0.5
-0.5
-1.3
380
-
-
-
-
-
-
Symbol
V
V
V
Tstg
I
Pd
Pd
Tj
I
I
CBO
CEO
EBO
CP
MHz
Unit
C
B
mV
µA
µA
pF
V
V
V
V
-
-
*Pulse Test : Pulse Width 380µs, Duty Cycle 2%
Test Conditions
I
I
I
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CE
CB
=-10µA, I
=-10µA, I
=-1mA, I
=-3A, I
=-3A, I
=-20V, I
=-4V, I
=-2V, I
=-2V, I
=-5V, I
=-10V, f =1MHz
B
B
=-60mA
=-60mA
-55~+150
C
C
C
C
B
C
E
=0
=-0.5A
=-4A
=-200mA, f =100MHz
Limits
E
=0
=0
=0
=0
150
-0.5
-25
-20
10
-5
-5
-8
1
CYStek Product Specification
(Note 1)
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date :
Page No. : 2/ 5
Unit
W
V
V
V
A
A
C
C