2SD814A Panasonic Semiconductor, 2SD814A Datasheet
2SD814A
Manufacturer Part Number
2SD814A
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD814A.pdf
(3 pages)
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Transistors
2SD0814A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
automatic insertion through the tape packing and the magazine
packing.
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
90 to 155
*
Q
(2SD814A)
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
I
T
V
V
CBO
CEO
EBO
a
CP
130 to 220
I
C
stg
CE(sat)
C
NV
C
h
CBO
j
f
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +150
CEO
Rating
I
I
V
V
I
V
V
V
R
C
E
C
185
185
100
200
150
CB
g
Note) The part number in the parenthesis shows conventional part number.
CB
CE
CB
CE
50
= 10 µA, I
= 100 µA, I
= 30 mA, I
5
= 100 kΩ, Function = FLAT
SJC00196CED
= 5 V, I
= 10 V, I
= 10 V, I
= 100 V, I
= 10 V, I
185 to 330
S
C
C
Conditions
E
Unit
mW
B
E
C
mA
mA
= 10 mA
°C
°C
B
V
V
V
= 0
E
= −10 mA, f = 200 MHz
= 3 mA
= 0, f = 1 MHz
= 1 mA, G
= 0
= 0
V
= 80 dB
Marking Symbol ： L
10˚
(0.95) (0.95)
1
2.90
1.9
+0.20
–0.05
±0.1
Min
185
0.40
3
90
5
2
+0.10
–0.05
Typ
150
150
2.3
Mini3-G1 Package
Max
330
1
1
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
+0.10
–0.06
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1
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2SD814A Summary of contents
Page 1
... Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification ■ Features • High collector-emitter voltage (Base open) V • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ■ ...
Page 2
240 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...