2SD874A Panasonic Semiconductor, 2SD874A Datasheet
2SD874A
Manufacturer Part Number
2SD874A
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD874A.pdf
(3 pages)
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Transistors
2SD0874, 2SD0874A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
■ Features
■ Absolute Maximum Ratings T
Note) * : Printed circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
• Large collector power dissipation P
• Low collector-emitter saturation voltage V
• Mini power type package, allowing downsizing of the equipment and
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD0874
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing and the magazine packing
2. * 1: Pulse measurement
board thickness of 1.7 mm for the collector portion
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
85 to 170
2SD0874
2SD0874A
2SD0874A
*
2SD0874
2SD0874A
2SD0874
2SD0874A
* 1
Q
* 1
* 1
a
Symbol
C
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
120 to 240
I
FE1
h
C
stg
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
* 2
R
CE(sat)
−55 to +150
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
150
2
CB
Note) The part numbers in the parenthesis show conventional part number.
1.5
CB
CE
CE
CB
30
60
25
50
= 10 µA, I
= 10 µA, I
= 2 mA, I
= 500 mA, I
= 500 mA, I
5
1
1
or more, and the
SJC00197CED
= 10 V, I
= 5 V, I
= 10 V, I
= 20 V, I
= 10 V, I
170 to 340
S
B
C
C
E
Conditions
E
Unit
E
C
E
= 0
= 1 A
°C
°C
W
V
V
V
A
A
= 0
= 0
B
B
= −50 mA, f = 200 MHz
= 0
= 500 mA
= 0, f = 1 MHz
(2SD874, 2SD874A)
= 50 mA
= 50 mA
Marking Symbol:
0.4
1.5
±0.08
±0.1
3˚
• 2SD0874: Z
• 2SD0874A: Y
1
3.0
4.5
1.6
Min
30
60
25
50
85
50
±0.15
±0.1
±0.2
5
2
0.5
±0.08
3
0.85
Typ
200
0.2
MiniP3-F1 Package
45˚
Max
340
1.5
0.1
0.4
1.2
20
±0.1
0.4
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1
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2SD874A Summary of contents
Page 1
... Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors Pulse measurement * 2: Rank classification Rank 170 FE1 Publication date: November 2002 (2SD874, 2SD874A) C CE(sat) = 25°C a Symbol Rating Unit V 30 ...
Page 2
1.4 Copper plate at the collector 2 is more than area, 1.2 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...