2SD968A Panasonic Semiconductor, 2SD968A Datasheet
2SD968A
Manufacturer Part Number
2SD968A
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD968A.pdf
(3 pages)
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Transistors
2SD0968A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SB0789A (2SB789A)
■ Features
■ Absolute Maximum Ratings T
Note) * : Print circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• High collector-emitter voltage (Base open) V
• Large collector power dissipation P
• Mini power type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing and the magazine packing
2. * 1: Pulse measurement
thickness of 1.7 mm for the collector portion.
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
130 to 220
*
*1
R
*1
(2SD968A)
*1
a
Symbol
C
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
I
P
I
T
CBO
CEO
EBO
V
V
a
CP
185 to 330
FE1
h
C
stg
CE(sat)
BE(sat)
C
C
j
f
CEO
EBO
FE2
= 25°C
T
ob
*2
S
−55 to +150
2
CEO
or more, and the board
Rating
I
I
V
V
I
I
V
V
C
E
C
C
120
120
150
CB
Note) The part numbers in the parenthesis show conventional part number.
0.5
CE
CE
CB
= 10 µA, I
= 100 µA, I
= 500 mA, I
= 500 mA, I
5
1
1
SJC00202DED
= 10 V, I
= 10 V, I
= 5 V, I
= 10 V, I
C
C
E
Conditions
Unit
C
E
= 500 mA
°C
°C
B
W
V
V
V
A
A
= 0
B
B
= −50 mA, f = 200 MHz
= 150 mA
= 0, f = 1 MHz
= 0
= 50 mA
= 50 mA
Marking Symbol: V
0.4
1.5
±0.08
±0.1
3˚
1
3.0
4.5
1.6
±0.15
Min
120
130
±0.1
±0.2
50
2
0.5
5
±0.08
3
0.85
Typ
120
0.2
45˚
MiniP3-F1 Package
Max
1.20
1.5
330
0.6
20
±0.1
0.4
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
1
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2SD968A Summary of contents
Page 1
... Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) ■ Features • High collector-emitter voltage (Base open) V • Large collector power dissipation P • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ ...
Page 2
1.4 Copper plate at the collector 2 is more than area, 1.2 1 thickness 1.0 0.8 0.6 0.4 0 120 160 ( °C ) Ambient ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...