2SD2459 Panasonic Semiconductor, 2SD2459 Datasheet
2SD2459
Manufacturer Part Number
2SD2459
Description
Silicon NPN epitaxial planer type(For low-frequency output amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD2459.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2459
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SD2459
Silicon NPN epitaxial planer type
For low-frequency output amplification
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE1
Features
High collector to emitter voltage V
Low collector to emitter saturation voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
120 ~ 240
Symbol
2ER
V
V
V
I
I
P
T
T
CP
C
R
C
j
stg
CBO
CEO
EBO
*
I
V
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
*1
CEO
(Ta=25˚C)
170 ~ 340
–55 ~ +150
.
2
2ES
Ratings
or more, and the board
S
150
150
150
1.5
5
1
1
V
I
I
I
V
V
I
I
V
V
CE(sat)
C
C
E
C
C
CB
CB
CE
CE
CB
= 10 A, I
= 1mA, I
= 10 A, I
= 500mA, I
= 500mA, I
= 10V, I
= 2V, I
= 2V, I
= 75V, I
= 10V, I
.
C
C
B
Unit
C
Conditions
E
E
˚C
˚C
E
E
W
V
V
V
A
A
= 100mA
= 500mA
= 0
= –50mA, f = 200MHz
= 0
= 0
B
B
= 0
= 0, f = 1MHz
= 25mA
= 25mA
*2
*2
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
150
150
120
3
40
5
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
0.11
2E
1
typ
0.8
90
12
*2
Pulse measurement
max
340
0.1
0.3
1.2
20
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
V
A
1
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2SD2459 Summary of contents
Page 1
... Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Features High collector to emitter voltage V Low collector to emitter saturation voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. ...
Page 2
... V ) Collector to emitter voltage — 500 V =2V CE 400 300 Ta=100˚C 200 25˚C –25˚C 100 0 0.01 0.03 0.1 0 Collector current I C 2SD2459 V — I CE(sat = 0.3 Ta=100˚C 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0 Collector current I ...