PZTA63 Siemens Semiconductor Group, PZTA63 Datasheet

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PZTA63

Manufacturer Part Number
PZTA63
Description
PNP Silicon Darlington Transistors
Manufacturer
Siemens Semiconductor Group
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PZTA63
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Type
PZTA 63
PZTA 64
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
2)
PNP Silicon Darlington Transistors
Semiconductor Group
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm
For general AF applications
High collector current
High current gain
Complementary types: PZTA 13, PZTA 14 (NPN)
Marking
PZTA 63
PZTA 64
2)
S
= 124 ˚C
Ordering Code
(tape and reel)
Q62702-Z2031
Q62702-Z2032
Symbol
V
V
V
I
I
I
I
P
T
T
R
R
C
CM
B
BM
j
stg
CES
CB0
EB0
tot
th JA
th JS
1
2
B
1
Cu.
Pin Configuration
– 65 … + 150
C
2
Values
500
800
100
200
150
1.5
30
30
10
72
17
E
3
C
4
Package
SOT-223
PZTA 63
PZTA 64
Unit
V
mA
W
˚C
K/W
1)
5.91

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PZTA63 Summary of contents

Page 1

... PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: PZTA 13, PZTA 14 (NPN) Type Marking PZTA 63 PZTA 63 PZTA 64 PZTA 64 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC characteristics Collector-emitter breakdown voltage I = 100 A C Collector-base breakdown voltage I = 100 Emitter-base breakdown voltage ...

Page 3

Total power dissipation P * Package mounted on epoxy Permissible pulse load P tot max Semiconductor Group = Transition frequency f tot 100 MHz ...

Page 4

Collector-emitter saturation voltage = sat = 1000 h FE Collector cutoff current I CB0 = Semiconductor Group Base-emitter saturation voltage = sat = 1000 h ...

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