2SB968 Panasonic Semiconductor, 2SB968 Datasheet
2SB968
Manufacturer Part Number
2SB968
Description
For Low-Frequency Output Amplification
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB968.pdf
(4 pages)
www.DataSheet4U.com
Power Transistors
2SB0968
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Possible to solder radiation fin directly to printed circuit board
• High collector-emitter voltage (Base open) V
• Large collector power dissipation P
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation (T
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * : Rank classification
Rank
Parameter
h
Parameter
FE1
80 to 160
C
(2SB968)
= 25°C)
Q
a
Symbol
C
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
h
I
T
V
V
CBO
CEO
EBO
a
CP
120 to 220
I
I
I
h
C
stg
CE(sat)
BE(sat)
C
C
FE1
CBO
CEO
EBO
j
f
CBO
CEO
FE2
= 25°C
T
ob
*
R
−55 to +150
CEO
Rating
I
I
V
V
V
V
V
I
I
V
V
C
C
C
C
−1.5
−50
−40
150
CE
Note) The part number in the parenthesis shows conventional part number.
CB
CE
EB
CE
CE
CB
−5
−3
10
= −1 mA, I
= −2 mA, I
= −1.5 A, I
= −2 A, I
SJD00035AED
= −10 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −20 V, I
= −20 V, I
B
Conditions
C
Unit
B
= − 0.2 A
E
B
C
C
C
°C
°C
W
V
V
V
A
A
B
E
E
= − 0.5 A, f = 200 MHz
= 0
= 0
= − 0.15 A
= 0
= −1 A
= −1 mA
= 0
= 0
= 0, f = 1 MHz
Note) Self-supported type package is also prepared.
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
1
1
4.35
6.5
5.3
4.6
Min
−50
−40
80
10
2
±0.1
±0.1
±0.1
±0.1
2
3
3
2.3
Typ
150
0.75
45
±0.1
±0.1
1.0
0.1
±0.1
0.5
±0.05
−100
Max
−1.5
−10
220
−1
−1
2.3
(4.35)
±0.1
(5.3)
(3.0)
±0.1
Unit: mm
0.5
MHz
Unit
±0.1
µA
µA
µA
pF
V
V
V
V
1
Related parts for 2SB968
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SB968 Summary of contents
Page 1
... Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) V • Large collector power dissipation P ■ Absolute Maximum Ratings T ...
Page 2
120 Ambient temperature T (°C) a BE(sat) C www.DataSheet4U.com I −10 −1 T =–25˚C C 100˚C 25˚C − 0.1 − 0.01 − ...
Page 3
Safe operation area −10 Single pulse T =25˚ t=1ms I −1 C t=1s − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 Collector-emitter voltage V CE www.DataSheet4U.com −100 (V) SJD00035AED 2SB0968 3 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...