2SB1553 Panasonic Semiconductor, 2SB1553 Datasheet

Page 1

... Power Transistors 2SB1553 Silicon PNP epitaxial planar type For power amplification Features High foward current transfer ratio h Satisfactory linearity of foward current transfer ratio h Allowing automatic insertion with radial taping Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage ...

Page 2

... B2 V =–50V =25˚ stg 0.3 0.1 0.03 0.01 0 –2 –4 –6 –8 Collector current 2SB1553 I — –6 V =–4V CE –5 –4 –3 25˚C –2 T =125˚C C –25˚C – – 0.4 – 0.8 –1.2 –1.6 –2 Base to emitter voltage V ...

Page 3

... Power Transistors R 10000 Note: R was measured at Ta=25˚C and under natural convection. th (1) Without heat sink (2) With a 50 1000 100 10 1 0.1 –4 –3 –2 – Time — t th(t) 50 2mm Al heat sink (1) ( 2SB1553 4 3 ...