2SB1679 Panasonic Semiconductor, 2SB1679 Datasheet
2SB1679
Manufacturer Part Number
2SB1679
Description
Silicon PNP epitaxial planer type(For low-frequency amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB1679.pdf
(1 pages)
Transistors
2SB1679
Silicon PNP epitaxial planer type
For low-frequency amplification
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) * 1: Pulse measurement
• Large current capacitance
• Low collector to emitter saturation voltage
• Small type package, allowing downsizing and thinning of the
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
equipment.
* 2: Rank classification
Parameter
Parameter
Rank
h
FE1
130 to 220
R
* 1
* 1
Symbol
* 1
V
V
V
T
I
P
CBO
I
T
CEO
EBO
CP
C
stg
C
a
j
Symbol
V
V
= 25°C ± 3°C
180 to 350
V
V
V
I
h
h
CE(sat)
BE(sat)
C
CBO
FE1
FE2
f
a
CBO
CEO
EBO
T
ob
= 25°C
S
−55 to +150
* 2
Rating
− 0.5
−15
−10
150
150
−7
−1
V
V
V
I
I
I
I
I
V
V
C
C
E
C
C
CE
CE
CB
CB
CB
= −10 µA, I
= −10 µA, I
= −1 mA, I
= − 0.4 A, I
= − 0.4 A, I
= −2 V, I
= −2 V, I
= −10 V, I
= −10 V, I
= −10 V, I
Unit
mW
°C
°C
V
V
V
A
A
Conditions
C
C
B
E
B
B
E
C
= − 0.5 A
= −1 A
E
E
= 0
= 50 mA, f = 200 MHz
= 0
= 0
= −8 mA
= −8 mA
= 0
= 0, f = 1 MHz
Marking Symbol: 3V
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
Min
±0.1
±0.2
−15
−10
130
−7
60
2
S-Mini Type Package (3-pin)
− 0.16
− 0.8
Typ
130
22
−100
− 0.3
Max
−1.2
350
0.15
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
+0.10
–0.05
Unit: mm
MHz
Unit
nA
pF
V
V
V
V
V
1
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