2SB709A Panasonic Semiconductor, 2SB709A Datasheet

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2SB709A

Manufacturer Part Number
2SB709A
Description
Silicon PNP epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet

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Transistor
2SB709A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD601A
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE
Features
High foward current transfer ratio h
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE
160 ~ 260
Symbol
V
V
V
I
I
P
T
T
BQ
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
V
f
C
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
ob
*
(Ta=25˚C)
FE
210 ~ 340
–55 ~ +150
.
BR
Ratings
R
–200
–100
–45
–45
200
150
–7
V
V
I
I
I
V
I
V
V
C
C
E
C
CB
CE
CE
CB
CB
= –10 A, I
= –2mA, I
= –10 A, I
= –100mA, I
= –10V, I
= –10V, I
290 ~ 460
= –20V, I
= –10V, I
= –10V, I
BS
S
Unit
mW
mA
mA
Conditions
˚C
˚C
B
V
V
V
C
E
B
C
E
E
E
= 0
= 0
= 0
B
= 0
= 1mA, f = 200MHz
= 0, f = 1MHz
= 0
= –2mA
= –10mA
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
–45
–45
160
–7
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
– 0.3
typ
2.7
80
2.8
1.5
+0.2
–0.3
+0.25
–0.05
– 0.1
–100
– 0.5
max
460
3
0.65 0.15
Unit: mm
MHz
Unit
pF
V
V
V
V
A
A
1

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2SB709A Summary of contents

Page 1

... Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A Features High foward current transfer ratio h Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Parameter Symbol ...

Page 2

... Base to emitter voltage — 160 V =–10V CB Ta=25˚C 140 120 100 0.1 0 100 ( mA ) Emitter current I E 2SB709A I — –60 V =–5V CE Ta=25˚C –50 –40 –30 –20 – –150 –300 –450 ( A ) Base current — I CE(sat) C –10 I ...

Page 3

... Collector to emitter voltage — =– =50k g 18 Ta=25˚ f=100Hz 10 1kHz 8 10kHz 0.1 0 Emitter current I E 2SB709A h Parameter — 300 h fe 100 =–5V CE f=270Hz Ta=25˚C – 0.1 0 ...

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