2SB767 Panasonic Semiconductor, 2SB767 Datasheet
2SB767
Manufacturer Part Number
2SB767
Description
Silicon PNP epitaxial planer type(For low-frequency output amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB767.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB767
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD875
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h
Marking Symbol
FE1
Features
Large collector power dissipation P
High collector to emitter voltage V
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Parameter
Rank
h
FE1
Parameter
90 ~ 155
CQ
Q
Symbol
V
V
V
I
I
P
T
T
CP
C
C
j
stg
CBO
CEO
EBO
*
I
V
V
V
h
h
V
V
f
C
130 ~ 220
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
CR
*1
R
CEO
(Ta=25˚C)
C
.
–55 ~ +150
.
2
Ratings
or more, and the board
– 0.5
–80
–80
150
–5
–1
1
185 ~ 330
V
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CB
CB
CE
CE
CB
= –10 A, I
= –100 A, I
= –10 A, I
= –300mA, I
= –300mA, I
CS
S
= –10V, I
= –10V, I
= –5V, I
= –20V, I
= –10V, I
Unit
Conditions
C
˚C
˚C
W
V
V
V
A
A
C
E
E
C
E
E
= –500mA
B
= 50mA, f = 200MHz
= 0
= 0
B
B
= 0
= 0, f = 1MHz
= –150mA
= 0
= –30mA
= –30mA
*2
*2
*2
*2
Marking symbol
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
3
–80
–80
–5
90
50
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
: C
– 0.85
– 0.2
1
100
120
typ
20
*2
Pulse measurement
– 0.1
max
–0.4
–1.2
330
30
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
V
A
1
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2SB767 Summary of contents
Page 1
... Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Features Large collector power dissipation P High collector to emitter voltage V Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings ...
Page 2
... CP – – 0.3 t=1s – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 ( V ) Collector to emitter voltage V CE 2SB767 V — I CE(sat) C – = –3 –1 – 0.3 Ta=75˚C 25˚C – 0.1 –25˚C – 0.03 – 0.01 – 0.003 – 0.001 – ...