2SC2497 Panasonic Semiconductor, 2SC2497 Datasheet - Page 2

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2SC2497

Manufacturer Part Number
2SC2497
Description
Silicon NPN epitaxial planar type(For low-frequency power amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
Power Transistors
0.03
0.01
240
200
160
120
0.3
0.1
10
80
40
6
5
4
3
2
1
0
3
1
0.01
0
Collector to base voltage V
0
1
Ambient temperature T
Collector current I
0.03
40
3
V
C
(1)
(2)
BE(sat)
P
(1)With a 100×100×2mm
(2)Without heat sink
0.1
T
ob
C
C
80
Al heat sink
=–25˚C
25˚C
 V
10
100˚C
 T
0.3
 I
120
CB
a
C
C
30
I
f=1MHz
T
a
E
I
1
( A )
C
C
=0
=25˚C
CB
/I
160
( ˚C )
B
=10
( V )
100
3
1000
300
100
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
30
10
90
80
70
60
50
40
30
20
10
Base to emitter resistance R
Collector to emitter voltage V
0
3
1
0.01
0
0.1
0
Collector current I
0.3
0.03
2
V
4
1
I
CER
h
C
0.1
T
FE
 V
C
=100˚C
25˚C
3
6
 R
 I
–25˚C
0.3
CE
I
B
C
10
=50mA
8
BE
45mA
40mA
35mA
C
30mA
I
T
T
C
25mA
C
C
=10mA
20mA
=25˚C
=25˚C
V
15mA
1
( A )
30
10
10mA
CE
BE
5mA
CE
=5V
( kΩ )
100
12
( V )
3
0.03
0.01
240
200
160
120
0.3
0.1
10
10
10
10
80
40
10
–0.01 –0.03 –0.1 –0.3
3
1
0.01
0
1
4
3
2
2SC2497, 2SC2497A
0
Ambient temperature T
20
Collector current I
0.03
Emitter current I
40
25˚C
V
I
60
CE(sat)
CBO
f
0.1
T
T
80
 I
C
=100˚C
 T
100
 I
0.3
E
120
–1
a
E
C
–25˚C
C
V
f=200MHz
T
V
C
140
CB
( A )
=25˚C
CB
a
I
1
( A )
=5V
–3
C
=40V
/I
160
B
( ˚C )
=10
–10
189
180
3

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