2SC4417 Panasonic Semiconductor, 2SC4417 Datasheet
2SC4417
Manufacturer Part Number
2SC4417
Description
Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SC4417.pdf
(2 pages)
Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Features
High transition frequency f
Satisfactory linearity of forward current transfer ratio h
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
Symbol
V
V
V
I
P
T
T
C
T
C
j
stg
CBO
CEO
EBO
.
I
V
V
V
h
V
f
C
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
re
(Ta=25˚C)
–55 ~ +150
Ratings
150
150
45
35
50
4
V
I
I
I
V
I
V
V
C
E
E
C
CB
CE
CB
CB
= 10 A, I
= 1mA, I
= 10 A, I
= 20mA, I
= 10V, I
= 20V, I
= 10V, I
= 10V, I
B
Unit
mW
C
mA
Conditions
E
E
FE
B
˚C
˚C
E
E
B
V
V
V
= 0
= –10mA, f = 200MHz
= 0
= 0
= 0
= –10mA
= –1mA, f = 10.7MHz
.
= 2mA
Marking symbol :
1:Base
2:Emitter
3:Collector
min
45
35
20
4
0.425
1
2
EIAJ:SC–70
S–Mini Type Package
500
2Z
typ
50
1.25 0.1
2.1 0.1
0.2 0.1
max
0.425
100
0.5
1.5
10
3
Unit: mm
MHz
Unit
pF
V
V
V
V
A
1
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2SC4417 Summary of contents
Page 1
... Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Features High transition frequency Satisfactory linearity of forward current transfer ratio h S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... Collector current — 2.4 I =1mA C f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0 100 ( V ) Collector to emitter voltage V CE 2SC4417 I — =10V 25˚ Ta=75˚C –25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — 600 V =10V CB Ta=25˚C ...