2SC5216 Panasonic Semiconductor, 2SC5216 Datasheet
2SC5216
Manufacturer Part Number
2SC5216
Description
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SC5216.pdf
(2 pages)
Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Power gain
h
FE
Features
High transition frequency f
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
ratio
Parameter
Parameter
Symbol
V
V
V
I
P
T
T
C
T
C
j
stg
CBO
CEO
EBO
.
I
V
h
V
V
f
C
C
PG
h
EBO
T
FE
FE(RATIO)
(Ta=25˚C)
Symbol
CBO
CE(sat)
BE
ob
rb
(Ta=25˚C)
–55 ~ +150
Ratings
200
150
15
50
8
3
V
I
V
I
V
V
V
V
V
V
V
C
C
CB
CB
EB
CE
CE
CB
CB
CE
CE
= 100 A, I
= 20mA, I
= 10V, I
= 10V, I
= 2V, I
= 4V, I
= 4V, I
= 4V, I
= 4V, I
= 10V, I
= 6V, I
C
C
C
C
C
E
Unit
mW
mA
Conditions
E
E
˚C
˚C
E
B
V
V
V
= 0
= 2mA
= 2mA
= 0, f = 1MHz
= 100 A
= 2mA
E
= –15mA, f = 200MHz
= –10mA, f = 200MHz
= 0, f = 1MHz
= 4mA
= 0
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
100
0.8
0.6
0.6
15
14
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
1.5
FB
2.8
typ
0.7
1.3
1.0
0.4
18
+0.2
–0.3
+0.25
–0.05
max
350
0.5
1.9
1.4
1.5
3
22
2
0.65 0.15
Unit: mm
GHz
Unit
dB
pF
pF
V
V
V
A
1
Related parts for 2SC5216
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SC5216 Summary of contents
Page 1
... Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Features High transition frequency Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Parameter Symbol Collector to base voltage ...
Page 2
... Collector to emitter voltage — 300 V =4V CE 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.1 0 100 ( mA ) Collector current I C 2SC5216 I — 120 V =4V CE 100 80 60 25˚C 40 Ta=75˚C –25˚ 0.2 0.4 0.6 0.8 1.0 1 Base to emitter voltage — V ...