2SC5609 Panasonic Semiconductor, 2SC5609 Datasheet

2SC5609

Manufacturer Part Number

2SC5609

Description

Silicon PNP epitaxial planer type

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SC5609.pdf (1 pages)

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Transistors

2SC5609

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SA2021

I Features

I Absolute Maximum Ratings T

I Electrical Characteristics T

• High foward current transfer ratio h

• SSS-mini type package, allowing downsizing and thinning of the

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Collector output capacitance

Transition frequency

equipment and automatic insertion through the tape packing

Parameter

Symbol

CBO

CEO

EBO

stg

Symbol

= 25°C ± 3°C

CE(sat)

CBO

CEO

CBO

CEO

EBO

FE1

FE2

= 25°C

−55 to +125

Rating

200

100

125

= 10 µA, I

= 2 mA, I

= 100 mA, I

= 20 V, I

= 10 V, I

= 2 V, I

= 10 V, I

Unit

°C

Conditions

= 0

= 100 mA

= 0

= −2 mA, f = 200 MHz

= 0

= 2 mA

= 0, f = 1 MHz

= 10 mA

Marking Symbol: 3F

0.23

+0.05

–0.02

0.33

5˚

+0.05

–0.02

(0.40)

0.80

1.20

Min

180

(0.40)

±0.05

SSS Mini Type Package (3-pin)

Typ

0.1

3.5

Max

100

390

0.3

0.1

0.10

1: Base

2: Emitter

3: Collector

+0.05

–0.02

Unit: mm

MHz

Unit

µA

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