GP200MKS12 Dynex Semiconductor, GP200MKS12 Datasheet

no-image

GP200MKS12

Manufacturer Part Number
GP200MKS12
Description
IGBT Chopper Module Preliminary Information
Manufacturer
Dynex Semiconductor
Datasheet
FEATURES
APPLICATIONS
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module incoporates high current rated freewheel diodes. The
IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications.
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MKS12
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Internally Configured With Upper Arm Controlled
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
High Power Choppers
Motor Controllers
Induction Heating
Resonant Converters
Power Supplies
The Powerline range of high power modules includes half
The GP200MLS12 is a 1200V, n channel enhancement
The module incorporates an electrically isolated base plate
KEY PARAMETERS
V
V
I
I
C
C(PK)
CES
CE(sat)
1(A,E)
11
10
8
9
Fig. 2 Electrical connections - (not to scale)
9(C
(See package details for further information)
1
)
(typ)
(max)
(max)
Fig. 1 Chopper circuit diagram
1
Outline type code: M
IGBT Chopper Module
Preliminary Information
2(K)
1200V
2.7V
200A
400A
2
GP200MKS12
3
GP200MLK12
DS5448-1.2 April 2001
6
7
5
4
4(G)
3(C)
5(E
1
)
1/10

Related parts for GP200MKS12

GP200MKS12 Summary of contents

Page 1

... ORDERING INFORMATION Order As: GP200MKS12 Note: When ordering, please use the whole part number. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MKS12 IGBT Chopper Module Preliminary Information KEY PARAMETERS V 1200V CES ...

Page 2

... GP200MKS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...

Page 3

ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Symbol Parameter I Collector cut-off current CES I Gate leakage current GES Gate threshold voltage V GE(TH) V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward ...

Page 4

... GP200MKS12 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge - rr freewheel diode T = 125˚C unless stated otherwise ...

Page 5

TYPICAL CHARACTERISTICS 400 Common emitter T = 25˚C case 350 300 250 200 150 100 1.0 2.0 Collector-emitter voltage, V Fig. 3 Typical output characteristics 125˚ 15V 600V ...

Page 6

... GP200MKS12 ±15V 900V case 100 Collector current, I Fig. 7 Freewheel diode typical turn-off energy vs collector current 400 T = 25˚C j 350 300 250 200 150 100 0.5 1 1.5 2 Forward voltage, V Fig. 9 Freewheel diode typical forward characteristics 6/10 Caution: This device is sensitive to electrostatic discharge ...

Page 7

T = 125˚C case V = 15V 4 *Recommended minimum value 0 0 200 400 600 Collector-emitter voltage, V RBSOA Fig. 11 Forward bias safe ...

Page 8

... GP200MKS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...

Page 9

... HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office ...

Page 10

... GP200MKS12 HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...

Related keywords