GP200MKS12 Dynex Semiconductor, GP200MKS12 Datasheet - Page 4

• Manufacturer Part Number: GP200MKS12
• Description: IGBT Chopper Module Preliminary Information
• Manufacturer: Dynex Semiconductor

GP200MKS12
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/10
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
OFF
t
OFF
t
t
t
ON
ON
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge -
freewheel diode
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge -
freewheel diode
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
R
R
= 200A, V
= 200A, V
G(ON)
G(ON)
dI
Test Conditions
dI
Test Conditions
F
F
/dt = 2000A/ s
/dt = 2500A/ s
V
V
V
V
L ~ 100nH
L ~ 100nH
= R
= R
I
GE
CE
I
GE
CE
C
C
= 200A
= 200A
= 600V
= 600V
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 50% V
= 50% V
= 4.7
= 4.7
CES
CES
,
,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
Typ.
Typ.
600
200
500
110
500
150
400
40
40
55
25
80
20
20
Max.
Max.
800
250
650
150
700
200
550
110
50
55
70
35
30
30
Units
Units
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
C
C