GP200MKS12 Dynex Semiconductor, GP200MKS12 Datasheet - Page 5

• Manufacturer Part Number: GP200MKS12
• Description: IGBT Chopper Module Preliminary Information
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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250
200
400
350
300
150
100
60
50
40
30
20
10
50
Fig. 5 Typical turn-on energy vs collector current
0
0
0
0
Common emitter
T
T
V
V
case
j
GE
CE
= 125˚C
Fig. 3 Typical output characteristics
= 600V
= 15V
= 25˚C
1.0
Collector-emitter voltage, V
50
Collector current, I
2.0
100
3.0
C
- (A)
V
ce
ge
- (V)
150
= 20/15/12/10V
A: R
B: R
C: R
4.0
g
g
g
= 10
= 6.2
= 4.7
A
B
C
200
5.0
50
45
40
35
30
25
20
15
10
250
200
400
350
300
150
100
5
0
Fig. 6 Typical turn-off energy vs collector current
50
0
0
0
T
V
V
Common emitter
T
j
GE
CE
= 125˚C
case
Fig. 4 Typical output characteristics
= 600V
= 15V
= 125˚C
1.0
50
Collector-emitter voltage, V
Collector current, I
2.0
100
3.0
C
- (A)
GP200MLK12
V
ge
ce
150
= 20/15/12/10V
- (V)
A: R
B: R
C: R
4.0
g
g
g
= 10
= 6.2
= 4.7
A
B
C
200
5/10
5.0