BYW29G-200 STMicroelectronics, BYW29G-200 Datasheet - Page 3

• Manufacturer Part Number: BYW29G-200
• Description: HIGH EFFICIENCY FAST RECOVERY DIODES
• Manufacturer: STMicroelectronics

Fig.1 : Average forward power dissipation versus
average forward current.
12
10
Fig.3 : Forward voltage drop versus forward cur-
rent (maximum values).
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
80
70
60
50
40
30
20
10
0.001
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
6
4
2
0
0
0
P F(av)(W)
I M(A)
0.1
IM
VFM(V)
Tj= 125 C
1
2
o
t
=0.5
=0.05
3
0.01
1
4
=0.1
t(s)
I F(av)(A)
5
IFM(A)
=0.2
6
7
0.1
10
8
=0.5
=tp/T
9
Tc=120 C
Tc=25 C
Tc=75 C
T
10 11
o
=1
o
100
o
tp
1
Fig.2 : Peak current versus form factor.
160
140
120
100
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0.5
0.2
Fig.6 : Average current versus ambient tempera-
ture. (duty cycle : 0.5)
10
1.0
0.1
9
8
7
6
5
4
3
2
1
0
80
60
40
20
1.0E-03
0
0
K
I
0
K =
F(av)(A)
I M(A)
= 0 .1
= 0 . 2
=0.5
Zth(j-c) (tp. )
=tp/T
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Single pulse
20
= 0 . 5
Rth(j-c)
P=10W
P=5W
T
40
1.0E-02
tp
60
Rth(j-a)=15
tp(s)
P=15W
Tamb( C)
80
100 120 140
1.0E-01
o
Rth(j-a)=Rth(j-c)
o
C/W
BYW29G-200
=tp/T
=tp/T
T
tp
T
1. 0E+00
tp
160
I M
3/5
1