DPAD10 Micross, DPAD10 Datasheet
DPAD10
Manufacturer Part Number
DPAD10
Description
Dual PicoAmp Diodes
Manufacturer
Micross
Datasheet
1.DPAD10.pdf
(1 pages)
DPAD10 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
The DPAD10 extremely low-leakage monolithic dual
diode provides a superior alternative to conventional
diode technology when reverse current (leakage) must
be minimized. In addition the monolithic dual
construction allows excellent capacitance matching per
diode. The DPAD10 features a leakage current of -10
pA and is well suited for use in applications such as
input protection for operational amplifiers.
DPAD10 Benefits:
DPAD10 Applications:
Notes:
1. Absolute maximum ratings are limiting values above which DPAD10 serviceability may be impaired.
Available Packages:
DPAD10 in TO-72
DPAD10 available as bare die
Please contact Micross for full package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email:
Web:
|C
SYMBOL
R1
BV
C
V
I
rSS
‐C
R
http://www.micross.com/distribution
F
R
chipcomponents@micross.com
R2
Negligible Circuit Leakage Contribution
Circuit “Transparent” Except to Shunt
High-Frequency Spikes
Simplicity of Operation
Op Amp Input Protection
Multiplexer Overvoltage Protection
|
Click To Buy
Linear Systems replaces discontinued Siliconix DPAD10
The DPAD10 is a low leakage Monolithic Dual Pico-Amp Diode
Maximum Reverse Leakage Current
Differential Capacitance (∆C
Reverse Breakdown Voltage
Total Reverse Capacitance
CHARACTERISTICS
Forward Voltage
R
)
PICO-AMP DUAL DIODE
MIN.
‐45
‐‐
‐‐
‐‐
‐‐
LOW LEAKAGE
DPAD10
FEATURES
DIRECT REPLACEMENT FOR SILICONIX DPAD10
HIGH ON ISOLATION
EXCELLENT CAPACITANCE MATCHING
ULTRALOW LEAKAGE
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Forward Current (Note 1)
TYP.
0.8
‐‐
‐‐
‐‐
‐‐
MAX.
‐10
1.5
2.0
0.5
‐‐
baredie@micross.com
UNITS
pA
pF
pF
V
V
Web:
TO-72 (Bottom View)
www.micross.com/distribution.aspx
V
R1
V
= V
R
CONDITIONS
= ‐5V, f = 1MHz
R2
V
I
I
R
F
R
= ‐5V, f = 1MHz
= ‐1µA
= 1mA
= ‐ 20V
‐65°C to +150°C
‐55°C to +135°C
∆C
C
BV
rss
500mW
≤ 10 pA
R
50mA
R
20fA
≤ 2.0pF
≤ 0.5pF
≥ ‐45V