LS4351_TO-72 MICROSS [Micross Components], LS4351_TO-72 Datasheet
LS4351_TO-72
Manufacturer Part Number
LS4351_TO-72
Description
N-Channel Mosfet
Manufacturer
MICROSS [Micross Components]
Datasheet
1.LS4351_TO-72.pdf
(1 pages)
LS4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SWITCHING CHARACTERISTICS TIMING WAVEFORMS
SWITCHING TEST CIRCUIT
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
Micross Components Europe
Tel: +44 1603 788967
Email:
Web:
The LS4351 is an enhancement mode N-Channel
Mosfet designed for use as a General Purpose amplifier
or switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
LS4351 Features:
SYMBOL
SYMBOL
V
V
r
BV
I
t
t
DS(on)
DS(on)
I
I
D(on)
C
C
GS(th)
C
d(on)
d(off)
g
GSS
DSS
t
t
rss
db
iss
http://www.micross.com/distribution
DSS
fs
r
f
chipcomponents@micross.com
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage
Click To Buy
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Drain to Source “On” Resistance
The LS4351 is an enhancement mode N-Channel Mosfet
Reverse Transfer Capacitance
Drain to Source “On” Voltage
Drain Leakage Current “Off”
Forward Transconductance
Drain to Body Capacitance
Gate Leakage Current
Turn Off Delay Time
Turn On Delay Time
Drain Current “On”
Turn On Rise Time
Input Capacitance
Turn Off Fall Time
CHARACTERISTIC
CHARACTERISTIC
Note 1 ‐ Absolute maximum ratings are limiting values above which LS4351 serviceability may be impaired.
Note 2 ‐ Device must not be tested at ±125V more than once or longer than 300ms.
1000
‐‐
N-CHANNEL MOSFET
MAX
MIN
100
25
45
65
60
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
1
3
Available Packages:
LS4351 in TO-72
LS4351 in bare die.
Please contact Micross for full
package and die dimensions
UNITS
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 2N4351
HIGH DRAIN CURRENT
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Drain to Source (Note 1)
MAXIMUM VOLTAGES
Drain to Body
Drain to Source
Peak Gate to Source (Note 2)
TYP.
LS4351
ns
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
300
1.3
5.0
10
10
‐‐
‐‐
‐‐
1
5
5
chipcomponents@micross.com
UNITS
mA
pA
nA
µS
pF
Ω
V
I
Web:
V
TO-72 (Bottom View)
V
V
DS
DS
DS
www.micross.com/distribution.aspx
V
= 10V, V
= 0V, V
= 10V, I
GS
V
V
V
V
= 10V, I
V
I
DB
DS
D
GS
GS
GS
D
= 10µA, V
= 10V, I
= 2mA, V
= 10V, V
= 10V, f = 140kHz
= ±30V, V
= 10V, V
CONDITIONS
GS
D
GS
= 2mA , f = 1MHz
D
= 0V , f = 140kHz
‐65°C to +200°C
‐55°C to +150°C
= 0V , f = 140kHz
= 0A, f = 1kHz
* Body tied to case
g
I
D
fS
D
DS
DS
375mW
GS
GS
100mA
= 100mA
= 1000µS
±125V
= 10µA
DS
= 10V
= 10V
= 10V
25V
25V
= 0V
= 0V