SST108_SOT-23 MICROSS [Micross Components], SST108_SOT-23 Datasheet
SST108_SOT-23
Manufacturer Part Number
SST108_SOT-23
Description
N-CHANNEL JFET
Manufacturer
MICROSS [Micross Components]
Datasheet
1.SST108_SOT-23.pdf
(1 pages)
SST108 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST108 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST108 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SST108 SWITCHING CIRCUIT PARAMETERS
SST108 Benefits:
Micross Components Europe
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
SST108 Applications:
Note 1 ‐ Absolute maximum ratings are limiting values above which SST108 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Tel: +44 1603 788967
Email:
Web:
SYMBOL
SYMBOL
SYMBOL
V
r
r
BV
V
V
I
t
t
I
DS(on)
DS(on)
GS(off)
I
I
D(off)
C
D(on)
C
d(on)
d(off)
g
GS(F)
g
e
DSS
GSS
GS(L)
R
I
t
t
G
iss
rss
os
GSS
fs
r
f
n
L
http://www.micross.com/distribution
chipcomponents@micross.com
Low On Resistance
Low insertion loss
Low Noise
Analog Switches
Commutators
Choppers
Click To Buy
Linear Systems replaces discontinued Siliconix SST108
Drain to Source Saturation Current (Note 2)
Gate to Source Breakdown Voltage
10mA
150Ω
‐12V
Gate to Source Forward Voltage
Drain to Source On Resistance
Drain to Source On Resistance
Gate to Source Cutoff Voltage
Reverse Transfer Capacitance
Forward Transconductance
Turn On Rise Time
Turn Off Fall Time
Equivalent Noise Voltage
CHARACTERISTIC
Gate Operating Current
Turn Off Time
Gate Reverse Current
Turn On Time
Output Conductance
Drain Cutoff Current
Input Capacitance
CHARACTERISTIC
CHARACTERISTIC
Available Packages:
SST108 in SOT-23
SST108 in bare die.
Please contact Micross for full
package and die dimensions
18
N-CHANNEL JFET
3
1
4
MIN
MIN
SST108
‐25
80
UNITS
‐3
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST108
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
ns
‐0.01
‐0.01
0.02
TYP.
TYP.
0.7
0.6
3.5
17
60
11
‐‐
‐‐
‐‐
‐‐
‐‐
SOT-23 (Top View)
MAX
MAX
‐10
‐3
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
3
8
8
nV/√Hz
UNITS
UNITS
mA
mS
nA
pF
V
Ω
Ω
See Switching Circuit
CONDITIONS
V
V
GS
DD
(H) = 0V
= 1.5V
V
V
V
V
DS
DS
DS
V
SWITCHING TEST CIRCUIT
DS
= 5V, I
= 0V, V
= 5V, I
GS
V
= 0V, V
V
V
V
I
V
DG
I
= 0V, I
G
V
G
GS
GS
DS
DS
DS
= 1mA, V
= 1µA, V
= 10V, I
= 5V, V
CONDITIONS
= ‐15V, V
= 0V, V
CONDITIONS
= 15V, V
= 5V, I
D
D
GS
= 10mA , f = 1kHz
= 10mA , f = 1kHz
GS
D
= 0A, f = 1kHz
= ‐10V, f = 1MHz
‐55°C to +150°C
‐55°C to +150°C
= 0V, f = 1MHz
GS
V
V
D
DS
D
r
t
DS(on)
DS
= 1µA
= 10mA
GDS
GSS
DS
GS
(on)
350mW
≤ 0.1V
DS
= ‐10V
50mA
= 0V
= 0V
= 0V
= 0V
= ‐25V
= ‐25V
≤ 4ns
≤ 8Ω