LS403_SOT-23 MICROSS [Micross Components], LS403_SOT-23 Datasheet
![no-image](/images/no-image-200.jpg)
LS403_SOT-23
Manufacturer Part Number
LS403_SOT-23
Description
a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
Manufacturer
MICROSS [Micross Components]
Datasheet
1.LS403_SOT-23.pdf
(1 pages)
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
The LSU403 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU403 features a 5-
mV offset and 10-µV/°C drift. The LSU403 is a direct
replacement for discontinued Siliconix LSU403.
The 6 Pin SOT-23 provides a low cost option and ease
of manufacturing.
(See Packaging Information).
LSU403 Applications:
V
Available Packages:
LSU403 in SOT-23
LSU403 available as bare die
Please contact
|I
|Y
GS
DSS1‐2
SYMBOL
‐I
‐I
FS1‐2
V
‐I
‐I
(off) or V
BV
GSS
GSS
BV
CMR
GS
G
G
Y
C
Y
I
C
Y
NF
Y
max.
max.
e
DSS
OSS
RSS
fSS
(on)
max.
max.
GGO
OS
ISS
fS
GSS
n
/ Y
/ I
DSS
FS
Wideband Differential Amps
High-Speed,Temp-Compensated Single-Ended
Input Amps
High-Speed Comparators
Impedance Converters and vibrations detectors.
Click To Buy
|
|
p
The LSU403 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
Micross
Linear Systems replaces discontinued Siliconix U403
COMMON MODE REJECTION
Mismatch at Full Conduction
Gate‐To‐Gate Breakdown
OUTPUT CONDUCTANCE
TRANSCONDUCTANCE
‐20 log | V
Breakdown Voltage
At Full Conduction
CHARACTERISTICS
High Temperature
High Temperature
Typical Operation
DRAIN CURRENT
Operating Range
Reverse Transfer
for full package and die dimensions
Pinchoff voltage
GATE CURRENT
Full Conduction
Full Conduction
GATE VOLTAGE
Full Conduction
CAPACITANCE
Operating
Operating
Mismatch
Voltage
NOISE
Figure
Input
GS1‐2
/ V
DS
|
2000
1000
MIN.
±50
‐0.5
0.5
50
95
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
5
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor – Note 1
‐V
‐V
‐I
Maximum Power Dissipation
Device Dissipation @ Free Air – Total 300mW
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
| V
| V
TYP.
0.6
0.2
60
20
G(f)
‐4
‐‐
‐‐
‐‐
‐‐
1
‐‐
‐‐
‐‐
‐‐
5
‐‐
‐‐
‐‐
‐‐
‐‐
LSU403
GSS
DSO
GS1‐2
GS1‐2
/ T| max.
| max.
MAX.
7000
2000
‐2.5
‐2.3
100
‐15
‐10
0.5
1.5
10
20
‐‐
‐‐
‐‐
‐‐
3
5
5
2
8
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
CHARACTERISTICS
OFFSET VOLTAGE
TEMPERATURE
DRIFT VS.
nV/√Hz
UNITS
µmho
µmho
µmho
µmho
mA
pA
nA
pA
pA
dB
dB
pF
pF
%
%
V
V
V
V
Micross Components Europe
Tel: +44 1603 788967
Email:
Web:
http://www.micross.com/distribution
chipcomponents@micross.com
I
V
V
V
| V
e
V
VALUE UNITS
T
DS
n
p
A
= 6nV/Hz @ 10Hz TYP.
25
10
= 2.5V TYP.
= +125°C
V
=15V I
V
V
GS1‐2
DG
DS
G
DG
DS
= 1nA I
V
= 15V I
= 15V I
= 10V V
V
= 15V V
f= 100Hz NBW= 6Hz
V
V
V
V
DS
V
DG
/ T| = 10µV/°C TYP.
DG
DG
DS
DG
DS
DS
= 10 to 20V I
µV/°C
V
= 15V I
D
= 15V I
= 15V T
=15V I
= 10V V
= 10V V
DG
=200µA f=10Hz NBW=1Hz
= 0 I
mV
CONDITIONS
= 15V I
‐65°C to +150°C
+150°C
50V
50V
10mA
D
V
= 200µA f= 1MHz
GS
D
DS
= 200µA f = 1kHz
GS
= 0V R
CONDITIONS
V
T
V
D
D
=0
= 0V f = 1kHz
A
DG
DG
= 0 I
= 200µA
=‐55°C to +125°C
A
=10V, I
=10V, I
= +125°C
D
= 500µA
D
D
GS
GS
D
D
=1nA
= 1nA
=200µA
=30µA
= 0V
= 0V
G
= 10M
D
D
=200µA
=200µA
S
= 0