MMDF2C02E Motorola, MMDF2C02E Datasheet - Page 2

• Manufacturer Part Number: MMDF2C02E
• Description: COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
• Manufacturer: Motorola

MMDF2C02E
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (3)
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width 300 s, Duty Cycle
(3) Switching characteristics are independent of operating junction temperature.
2
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = 20 Vdc, V DS = 0)
Gate Threshold Voltage
Drain–to–Source On–Resistance
Drain–to–Source On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(V GS = 0 Vdc, I D = 250 Adc)
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = V GS , I D = 250 Adc)
(V DS = 5.0 Vdc, V GS = 4.5 Vdc)
(V DS = 3.0 Vdc, I D = 1.5 Adc)
(V DS = 3.0 Vdc, I D = 1.0 Adc)
(V GS = 10 Vdc, I D = 2.2 Adc)
(V GS = 10 Vdc, I D = 2.0 Adc)
(V GS = 4.5 Vdc, I D = 1.0 Adc)
(V GS = 4.5 Vdc, I D = 1.0 Adc)
Characteristic
(V DS = 16 Vdc, V GS = 0 Vdc,
(V DS = 16 Vdc, V GS = 0 Vdc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DD = 10 Vdc, I D = 1.0 Adc,
(V DD = 10 Vdc, I D = 1.0 Adc,
(V DD = 10 Vdc, I D = 1.0 Adc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DD = 10 Vdc, I D = 2.0 Adc,
(V DS = 16 Vdc, I D = 2.0 Adc,
(V DS = 16 Vdc, I D = 2.0 Adc,
(V DS = 16 Vdc, I D = 2.0 Adc,
(T A = 25 C unless otherwise noted) (1)
V GS = 4.5 Vdc,
V GS = 4.5 Vdc,
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
R G = 9.1 )
R G = 6.0 )
R G = 6.0 )
R G = 6.0 )
R G = 6.0 )
R G = 6.0 )
R G = 6.0 )
R G = 25 )
R G = 25 )
R G = 25 )
R G = 25 )
2%.
V (BR)DSS
R DS(on)
R DS(on)
Symbol
V GS(th)
I D(on)
t d(on)
t d(off)
t d(on)
t d(off)
Motorola TMOS Power MOSFET Transistor Device Data
I GSS
I DSS
C oss
C rss
C iss
g FS
Q T
Q 1
Q 2
Q 3
t r
t r
t f
t f
Polarity
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
—
—
—
Min
1.0
2.0
2.0
1.0
1.0
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10.6
Typ
380
340
235
220
2.0
2.6
2.8
7.0
1.3
1.0
2.9
3.5
2.7
3.0
55
75
10
20
35
40
19
53
25
41
13
17
29
27
30
18
28
10
—
—
—
—
—
—
—
—
—
—
0.100
0.250
0.200
0.400
Max
100
532
475
329
300
150
106
110
1.0
1.0
3.0
30
40
70
80
38
50
82
21
26
30
58
48
60
30
56
30
15
—
—
—
—
—
—
—
—
—
—
—
(continued)
mhos
nAdc
Ohm
Ohm
Unit
Vdc
Vdc
Adc
Adc
pF
nC
ns