MMDF2C02E Motorola, MMDF2C02E Datasheet - Page 3

• Manufacturer Part Number: MMDF2C02E
• Description: COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
• Manufacturer: Motorola

ELECTRICAL CHARACTERISTICS — continued
SOURCE–DRAIN DIODE CHARACTERISTICS (T C = 25 C)
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width 300 s, Duty Cycle
Motorola TMOS Power MOSFET Transistor Device Data
Forward Voltage (2)
Reverse Recovery Time
see Figure 7
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
0
1.5
V GS = 10 V
4.5 V
4.3 V
4.1 V
V DS 10 V
T J = 25 C
0.25
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
2
0.5
0.75
N–Channel
2.5
Characteristic
1
3.9 V
100 C
T J = –55 C
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc)
1.25
3
TYPICAL ELECTRICAL CHARACTERISTICS
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
1.5
25 C
(I F = I S ,
(I F = I S ,
(I F = I S ,
2%.
3.5
T J = 25 C
1.75
(T A = 25 C unless otherwise noted) (1)
3.7 V
3.3 V
3.1 V
2.7 V
2.5 V
3.5 V
2.9 V
2
4
Symbol
Q RR
V SD
t rr
t a
t b
4
3
2
1
0
4
3
2
1
0
2.5
0
V DS 10 V
V GS = 10
Figure 1. On–Region Characteristics
Polarity
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
3
7 V
P–Channel
0.8
Min
—
—
—
—
—
—
—
—
—
—
5 V
25 C
3.5
0.025
0.035
4.7 V
Typ
1.0
1.5
1.2
34
32
17
19
17
12
100 C
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
T J = –55 C
MMDF2C02E
Max
4
1.4
2.0
66
64
—
—
—
—
—
—
1.6
T J = 25 C
Unit
Vdc
ns
C
3
4.5
2