MMDF2C02E Motorola, MMDF2C02E Datasheet - Page 7

• Manufacturer Part Number: MMDF2C02E
• Description: COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
• Manufacturer: Motorola

the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (T C ) of 25 C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
verse any load line provided neither rated peak current (I DM )
nor rated voltage (V DSS ) is exceeded, and that the transition
time (t r , t f ) does not exceed 10 s. In addition the total power
averaged over a complete switching cycle must not exceed
(T J(MAX) – T C )/(R JC ).
in switching circuits with unclamped inductive loads. For reli-
Motorola TMOS Power MOSFET Transistor Device Data
The Forward Biased Safe Operating Area curves define
Switching between the off–state and the on–state may tra-
A power MOSFET designated E–FET can be safely used
0.01
100
0.1
10
280
240
200
160
120
1
80
40
0.1
0
25
Figure 8. Maximum Rated Forward Biased
V GS = 20 V
SINGLE PULSE
T C = 25 C
Figure 9. Maximum Avalanche Energy versus
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
T J , STARTING JUNCTION TEMPERATURE ( C)
Starting Junction Temperature
50
Safe Operating Area
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
N–Channel
1
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
dc
75
10 ms
100 s
100
10
10 s
SAFE OPERATING AREA
125
I pk = 9 A
100
150
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
to–source avalanche at currents up to rated pulsed current
(I DM ), the energy rating is specified at rated continuous cur-
rent (I D ), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 9). Maximum energy at cur-
rents below rated continuous I D can safely be assumed to
equal the values indicated.
Although many E–FETs can withstand the stress of drain–
0.01
100
280
240
200
160
120
0.1
10
80
40
1
0
0.1
25
V GS = 20 V
SINGLE PULSE
T C = 25 C
Figure 9. Maximum Avalanche Energy versus
Figure 8. Maximum Rated Forward Biased
T J , STARTING JUNCTION TEMPERATURE ( C)
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
50
Starting Junction Temperature
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
1
P–Channel
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
dc
75
10 ms
100 s
100
10
10 s
MMDF2C02E
125
I pk = 7 A
7
100
150