BTB1182J3 Cystech Electonics Corp, BTB1182J3 Datasheet
BTB1182J3
Related parts for BTB1182J3
BTB1182J3 Summary of contents
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... C：Collector E：Emitter Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (T =25℃) C Junction Temperature Storage Temperature : Note Single Pulse , Pw=10ms BTB1182J3 CYStech Electronics Corp -2A / -0. Outline (Ta=25 C) Symbol V CBO V CEO V EBO ...
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... Characteristics (Ta=25 C) Symbol Min. BV -40 CBO BV -30 CEO BV -5 EBO I - CBO I - EBO *V - CE(sat Cob - Classification Of hFE Rank P Range 82~180 BTB1182J3 CYStech Electronics Corp. Typ. Max. Unit - - µ µ 560 - 100 - MHz 120~270 180~390 www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003 ...
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... VCE= 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 VCE(SAT )@ IC=10IB 1000 100 1 10 100 Collector Current---IC(mA) BTB1182J3 CYStech Electronics Corp. 10000 VCE=6V 1000 VCE=1V 1000 10000 1000 10000 www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current ...
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... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1182J3 CYStech Electronics Corp ...