BTB772T3S Cystech Electonics Corp, BTB772T3S Datasheet

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BTB772T3S

Manufacturer Part Number
BTB772T3S
Description
Low Vcesat PNP Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp
Datasheet
Low Vcesat PNP Epitaxial Planar Transistor
BTB772T3/S
Features
Equivalent Circuit
Absolute Maximum Ratings
BTB772T3/S
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw ≦ 350µs, Duty ≦ 2%
Low V
Excellent current gain characteristics
Complementary to BTD882T3/S
Pb-free package is available
CE(sat)
BTB772T3/S
B:Base
C:Collector
E:Emitter
Parameter
, typically -0.3V at I
CYStech Electronics Corp.
C
/ I
(Ta=25 C)
B
= -2A / -0.2A
Pd(Ta=25℃)
Pd(Tc=25℃)
.
Symbol
I
I
C
C
V
V
V
Tstg
(pulse)
(DC)
CBO
CEO
EBO
Tj
Outline
TO-126
E C B
-55~+150
Limit
150
-40
-30
-7
-5
-3
10
1
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
*1
Unit
W
V
V
V
A
A
C
C

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BTB772T3S Summary of contents

Page 1

Low Vcesat PNP Epitaxial Planar Transistor BTB772T3/S Features Low V , typically -0. CE(sat) Excellent current gain characteristics Complementary to BTD882T3/S Pb-free package is available Equivalent Circuit BTB772T3/S B:Base C:Collector E:Emitter Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter ...

Page 2

... CBO BV -30 CEO BV -5 EBO I - CBO I - EBO *V - CE(sat BE(sat 100 Cob - Classification Rank Q Range 100~200 Ordering Information Device BTB772T3 BTB772T3S BTB772T3/S CYStech Electronics Corp. Typ. Max. Unit - - µ µA -0.3 -0 500 - 80 - MHz ...

Page 3

CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 VCE=2V 100 VCE= 100 Collector current---IC(mA) B-E saturation voltage vs Collector current 10000 IC=10IB 1000 100 1 10 100 Collector current---IC(mA) BTB772T3/S C-E saturation voltage vs ...

Page 4

TO-126 Dimension Inches DIM Min. Max 0.1500 0.1539 B 0.2752 0.2791 C ...

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