BTB1188M3 Cystech Electonics Corp, BTB1188M3 Datasheet
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BTB1188M3
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BTB1188M3 Summary of contents
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... Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation Junction Temperature Storage Temperature : Note 1. Single Pulse , Pw=10ms 2. When mounting ×40 ×0.7 mm ceramic board. BTB1188M3 CYStech Electronics Corp -2A / -0. Outline (Ta=25 C) Symbol V CBO V CEO V ...
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... Min. BV -40 CBO BV -30 CEO BV -5 EBO I - CBO I - EBO *V - CE(sat Cob - Classification Of hFE Rank P Range 82~180 Ordering Information Device BTB1188M3 BTB1188M3 CYStech Electronics Corp. Typ. Max. Unit - - µ µ 560 - 100 - MHz 120~270 180~390 ...
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... Characteristic Curves Current Gain vs Collector Current 1000 100 VCE=2V VCE= 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 VBESAT@IC=10IB 1000 100 1 10 100 Collector Current---IC(mA) BTB1188M3 10000 VCE=5V 1000 100 10 1 1000 10000 1 2.5 2 1 1000 10000 www.DataSheet4U.com Spec. No. : C812M3 Issued Date : 2003 ...
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... Reel Dimension Carrier Tape Dimension BTB1188M3 CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 4/5 CYStek Product Specification ...
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... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1188M3 CYStech Electronics Corp ...