S2DNF30L STMicroelectronics, S2DNF30L Datasheet - Page 4

• Manufacturer Part Number: S2DNF30L
• Description: Dual N-channel 30v - 0.09ohm - 3a So-8 Stripfet Tm Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
I
V
V
V
V
D
D
C
GS
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
=2.5A
= 250 µA, V
=125°C
V
R
(see Figure 12)
V
R
(see Figure 12)
=Max rating,
>I
= Max rating
= ±18V
= V
= 10V, I
= 5V, I
= 25V, f = 1 MHz,
= 0
= 10V
DD
DD
= 24V, I
G
G
Test conditions
Test conditions
D(on)
=4.7Ω, V
=4.7Ω, V
Test conditions
=15 V, I
=15 V, I
GS
, I
xR
D
D
D
D
= 1A
DS(on)max
= 1A
GS
= 250µA
= 2A,
D
D
GS
GS
=1A,
=1A,
= 0
= 4.5V
= 4.5V
Min.
Min.
30
Min.
1
Typ.
121
Typ.
0.09
0.13
2.5
4.5
1.7
0.9
45
11
Typ.
1.7
19
20
12
8
STS2DNF30L
Max.
±100
Max.
Max.
0.11
0.15
2.5
10
1
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
S
µA
µA
nA
ns
ns
ns
ns
V
V
Ω
Ω