2SK2593 Panasonic Semiconductor, 2SK2593 Datasheet

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2SK2593

Manufacturer Part Number
2SK2593
Description
Silicon N-Channel Junction FET
Manufacturer
Panasonic Semiconductor
Datasheet
Silicon Junction FETs (Small Signal)
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
*
Marking Symbol
I
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
DSS
Low noies, high gain
High gate to drain voltage V
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I
Features
Absolute Maximum Ratings
Electrical Characteristics
DSS
Runk
rank classification
(mA)
Parameter
Parameter
1 to 3
2BP
P
2 to 6.5
GDO
2BQ
Symbol
V
V
V
I
I
P
T
T
Symbol
I
I
V
V
| Y
C
C
NF
Q
D
G
DSS
GSS
D
j
stg
iss
rss
DSX
GDO
GSO
GDS
GSC
fs
(Ta = 25°C)
*
|
(Ta = 25°C)
V
V
I
V
V
V
V
f = 100Hz
G
5 to 12
DS
GS
DS
DS
DS
DS
55 to +125
2BR
Ratings
= 100 A, V
R
= 10V, V
= 30V, V
= 10V, I
= 10V, I
= 10V, V
= 10V, V
±30
125
125
55
10
55
55
Conditions
D
D
GS
GS
GS
= 5mA, f = 1kHz
= 10 A
DS
10 to 20
DS
= 0
= 0, f = 1MHz
= 0, R
2BS
= 0
= 0
S
Unit
mW
mA
mA
°C
°C
V
V
V
g
= 100k
Marking Symbol (Example): 2B
1: Source
2: Drain
3: Gate
min
2.5
55
1
1
2
typ
0.4
7.5
6.5
1.9
2.5
80
SS-Mini Type Package (3-pin)
1.6±0.15
0.8±0.1
0.2±0.1
max
20
10
5
0.4
EIAJ: SC-75
3
unit: mm
Unit
mA
mS
nA
dB
pF
pF
V
V
1

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2SK2593 Summary of contents

Page 1

... Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching Features Low noies, high gain High gate to drain voltage V GDO Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Absolute Maximum Ratings ...

Page 2

... V ) Gate to source voltage oss Ta=25˚ Drain to source voltage V DS 2SK2593 Ta=25˚ =0V GS – 0.2V 6 – 0.4V 4 – 0.6V – 0.8V 2 – 1.0V – 1. Drain to source voltage V ...

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